Samsung 512GB eUFS 3.1 Storage Chip Announced for Next-Gen Smartphones, Brings 3x Faster Write Speeds

Samsung has introduced its new 512GB eUFS three.1 storage chip for smartphones. The corporation claims mass production of this chip has previously begun, and it can be a decent up grade to the existing eUFS three. storage chips. The new 512GB eUFS three.1 storage chip statements to provide 3 periods a lot quicker generate speeds than the eUFS three. chip, with a sequential generate speed of in excess of 1,200MBps. The South Korean giant notes that the chip’s random general performance is up to sixty percent a lot quicker than the UFS three. storage chips utilized in smartphones at this time.

The new Samsung eUFS three.1 storage chip has been introduced in the 512GB configuration for now, but the corporation strategies to provide 128GB and 256GB configurations later on in the 12 months. The chip offers one hundred,000 IOPS for reads and 70,000 IOPS for writes – an improvement of up to 1.6 periods in excess of its predecessor. The sequential study general performance of the chip continues to be the exact same as its predecessor at 2,100MBps. To recall, Samsung introduced the eUFS three. storage chip in February final 12 months, and it offers study and generate speeds of 2,100MBps and 410MBps respectively. You can find a significant advancement in generate speeds, which as described, will be in excess of 1,200MBps on the new eUFS three.1 chip.

To comprehend how large of an up grade this new storage chip is, Samsung claims that the latest UFS three. chip requires 4 minutes to shift 100GB of info on telephones. The new eUFS three.1 chip, on the other hand, requires just about 1.5 minutes to do the exact same factor. The new chip offers a lot more than 2 times the speed of a SATA-based Computer and in excess of 10 periods the speed of a UHS-I microSD card, the corporation statements.